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MC9S08MM128 Datasheet, PDF (41/50 Pages) Freescale Semiconductor, Inc – Advanced Information
Preliminary Electrical Characteristics
2.13 Flash Specifications
This section provides details about program/erase times and program-erase endurance for the Flash memory.
Program and erase operations do not require any special power sources other than the normal VDD supply. For more detailed
information about program/erase operations, see the Memory chapter in the Reference Manual for this device
(MC9S08MM128RM).
Table 22. Flash Characteristics
#
Characteristic
Symbol
Min
Typical
Max
Unit
C
1
Supply voltage for program/erase
-40°C to 105°C
Vprog/erase
1.8
—
3.6
V
D
2 Supply voltage for read operation
3 Internal FCLK frequency1
VRead
1.8
—
3.6
V
D
fFCLK
150
—
200
kHz
D
4 Internal FCLK period (1/FCLK)
5 Byte program time (random location)2
6 Byte program time (burst mode)2
7 Page erase time2
8 Mass erase time2
Program/erase endurance3
9
TL to TH = –40°C to + 105°C
T = 25°C
tFcyc
tprog
tBurst
tPage
tMass
5
—
6.67
9
4
4000
20,000
10,000
—
—
—
100,000
—
μs
D
tFcyc
P
tFcyc
P
tFcyc
P
tFcyc
P
cycles
C
10 Data retention4
tD_ret
15
100
—
years
C
1 The frequency of this clock is controlled by a software setting.
2 These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
3 Typical endurance for flash was evaluated for this product family on the HC9S12Dx64. For additional information on how
Freescale defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile Memory.
4 Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated to
25°C using the Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer to
Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
Freescale Semiconductor
41
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Preliminary — Subject to Change