MRF281SR1_06 Datasheet, PDF (4/8 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Table 4. Common Source S - Parameters at V_DS = 26 Vdc, I_D = 250 mAdc
f
GHz
0.1
S₁₁
|S₁₁|
∠f
.982
-28
S₂₁
dB
∠f
18.9
160
S₁₂
|S₁₂|
∠f
.008
73
0.2
.947
-52
17.0
143
.015
58
0.3
.912
-73
15.0
129
.019
45
0.4
.886
-90
12.9
117
.022
36
0.5
.859
-103
11.1
108
.022
28
0.6
.854
-114
9.69
100
.023
23
0.7
.841
-123
8.54
93
.022
18
0.8
.837
-131
7.57
87
.021
15
0.9
.838
-138
6.69
81
.019
12
1.0
.841
-143
6.01
76
.018
11
1.1
.840
-149
5.41
72
.015
12
1.2
.849
-153
4.91
68
.013
13
1.3
.848
-158
4.51
64
.012
18
1.4
.856
-162
4.12
60
.010
26
1.5
.858
-167
3.78
57
.009
36
1.6
.871
-170
3.50
54
.008
54
1.7
.868
-173
3.22
51
.009
69
1.8
.870
-176
3.00
49
.009
82
1.9
.872
-180
2.80
46
.011
95
2.0
.877
178
2.63
44
.013
104
2.1
.876
174
2.47
41
.015
109
2.2
.880
171
2.36
39
.018
111
2.3
.882
168
2.21
36
.021
114
2.4
.886
165
2.12
34
.024
114
2.5
.896
162
1.97
32
.027
115
2.6
.897
158
1.89
29
.029
117
S₂₂
|S₂₂|
∠f
.851
-13
.811
-25
.770
-33
.741
-42
.719
-47
.718
-51
.709
-56
.714
-59
.719
-62
.728
-64
.742
-66
.745
-68
.758
-69
.769
-70
.786
-70
.797
-72
.808
-71
.823
-72
.828
-72
.845
-72
.843
-72
.859
-71
.858
-72
.872
-70
.863
-70
.873
-69
MRF281SR1 MRF281ZR1
4
RF Device Data
Freescale Semiconductor