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MRF281SR1_06 Datasheet, PDF (2/8 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors
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Table 3. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 20 μAdc)
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 25 mAdc)
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 0.1 A)
Dynamic Characteristics
Input Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Functional Tests (In Freescale Test Fixture)
Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
VGS(th)
2.4
3.2
4
Vdc
VGS(q)
3
4.1
5
Vdc
VDS(on)
0.18
0.24
0.30
Vdc
Ciss
—
5.5
—
pF
Coss
—
3.3
—
pF
Crss
—
0.17
—
pF
Gps
11
12.5
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
η
30
33
—
%
Input Return Loss
(VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IRL
—
- 16
- 10
dB
Intermodulation Distortion
(VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IMD
—
- 31
- 29
dBc
Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Gps
11
12.5
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 4 W, IDQ = 25 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
η
30
—
—
%
Input Return Loss
(VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IRL
—
- 16
- 10
dB
Intermodulation Distortion
(VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IMD
—
- 31
—
dBc
Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 4 W CW, IDQ = 25 mA,
f1 = 2000.0 MHz)
Gps
10.5
12
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 4 W CW, IDQ = 25 mA,
f1 = 2000.0 MHz)
η
40
44
—
%
MRF281SR1 MRF281ZR1
2
RF Device Data
Freescale Semiconductor
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