MRF281SR1_06 Datasheet, PDF (1/8 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Freescale Semiconductor
Technical Data
Document Number: MRF281
Rev. 5, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for digital and analog cellular PCN and PCS base station
applications with frequencies from 1000 to 2500 MHz. Characterized for
operation Class A and Class AB at 26 volts in commercial and industrial
applications.
• Specified Two - Tone Performance @ 1930 and 2000 MHz, 26 Volts
Output Power — 4 Watts PEP
Power Gain — 11 dB
Efficiency — 30%
Intermodulation Distortion — - 29 dBc
• Capable of Handling 10:1 VSWR, @ 26 Vdc,
2000 MHz, 4 Watts CW Output Power
Features
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• S - Parameter Characterization at High Bias Levels
• RoHS Compliant
• Available in Tape and Reel. R1 Suffix = 500 Units per
12 mm, 7 inch Reel.
MRF281SR1
MRF281ZR1
2000 MHz, 4 W, 26 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 458B - 03, STYLE 1
NI - 200S
MRF281SR1
CASE 458C - 03, STYLE 1
NI - 200Z
MRF281ZR1
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Off Characteristics
Drain - Source Breakdown Voltage
(V_GS = 0, I_D = 10 μAdc)
Zero Gate Voltage Drain Current
(V_DS = 28 Vdc, V_GS = 0)
Gate - Source Leakage Current
(V_GS = 20 Vdc, V_DS = 0)
V_(BR)DSS
I_DSS
I_GSS
Symbol
V_DSS
V_GS
P_D
T_stg
T_C
T_J
Symbol
R_θJC
Min
65
—
—
Value
- 0.5, +65
± 20
20
0.115
- 65 to +150
150
200
Value
5.74
Typ
Max
74
—
—
10
—
1
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Unit
°C/W
Unit
Vdc
μAdc
μAdc
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF281SR1 MRF281ZR1
1