MRF281SR1_06 Datasheet, PDF (3/8 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

f = 2000 MHz
Z_in
Z_o = 25 Ω
f = 1500 MHz
f = 2000 MHz _ZOL*
f = 1500 MHz
V_DD = 26 V, I_DQ = 25 mA, P_out = 4 W (PEP)
f
Z_in
MHz
Ω
Z_OL*
Ω
1500
1600
1700
1800
1900
2000
3.15 - j5.3
3.1 - j3.8
3.1 - j2.3
3.1 - j0.7
3.1 + j0.9
3.1 + j2.4
15.5 - j13.6
14.7 - j12.5
14.0 - j11.7
13.4 - j11.0
12.8 - j10.1
12.2 - j9.2
Z_in = Complex conjugate of source impedance.
Z_OL* = Complex conjugate of the optimum load
impedance at given output power, voltage,
IMD, bias current and frequency.
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z _in
Z _OL*
Figure 1. Series Equivalent Input and Output Impedance
RF Device Data
Freescale Semiconductor
MRF281SR1 MRF281ZR1
3