K10P100M72SF1 Datasheet, PDF (33/73 Pages) Freescale Semiconductor, Inc – K10 Sub-Family

Peripheral operating requirements and behaviors
Table 19. Flash command timing specifications (continued)
Symbol
t_eewr8b8k
t_eewr8b16k
t_eewr8b32k
Description
Byte-write to FlexRAM execution time:
• 8 KB EEPROM backup
• 16 KB EEPROM backup
• 32 KB EEPROM backup
Min.
—
—
—
Typ.
340
385
475
Max.
1700
1800
2000
Unit
Notes
μs
μs
μs
Word-write to FlexRAM for EEPROM operation
t_eewr16bers Word-write to erased FlexRAM location
execution time
—
175
260
μs
Word-write to FlexRAM execution time:
t_eewr16b8k
t_eewr16b16k
t_eewr16b32k
• 8 KB EEPROM backup
• 16 KB EEPROM backup
• 32 KB EEPROM backup
—
340
1700
μs
—
385
1800
μs
—
475
2000
μs
Longword-write to FlexRAM for EEPROM operation
t_eewr32bers Longword-write to erased FlexRAM location
execution time
—
360
540
μs
Longword-write to FlexRAM execution time:
t_eewr32b8k
t_eewr32b16k
t_eewr32b32k
• 8 KB EEPROM backup
• 16 KB EEPROM backup
• 32 KB EEPROM backup
—
545
1950
μs
—
630
2050
μs
—
810
2250
μs
1. Assumes 25MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
6.4.1.3 Flash current and power specfications
Table 20. Flash current and power specfications
Symbol
I_{DD_PGM}
Description
Worst case programming current in program flash
Typ.
Unit
10
mA
6.4.1.4 Reliability specifications
Table 21. NVM reliability specifications
Symbol Description
t_nvmretp10k Data retention after up to 10 K cycles
t_nvmretp1k Data retention after up to 1 K cycles
n_nvmcycp Cycling endurance
Min.
Program Flash
5
20
10 K
Typ.¹
50
100
50 K
Max.
—
—
—
Table continues on the next page...
Unit
years
years
cycles
Notes
2
K10 Sub-Family Data Sheet, Rev. 2, 4/2012.
Freescale Semiconductor, Inc.
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