K30P144M100SF2_1109 Datasheet, PDF (32/72 Pages) Freescale Semiconductor, Inc – K30 Sub-Family Data Sheet

Peripheral operating requirements and behaviors
Table 21. Flash command timing specifications (continued)
Symbol
t_ersblk256k
Description
Erase Flash Block execution time
• 256 KB program/data flash
Min.
Typ.
Max.
Unit
—
435
3700
ms
t_ersscr Erase Flash Sector execution time
Program Section execution time
t_pgmsec512
t_pgmsec1k
t_pgmsec2k
• 512 B flash
• 1 KB flash
• 2 KB flash
t_rd1all Read 1s All Blocks execution time
t_rdonce Read Once execution time
t_pgmonce Program Once execution time
t_ersall Erase All Blocks execution time
t_vfykey Verify Backdoor Access Key execution time
Swap Control execution time
t_swapx01
t_swapx02
t_swapx04
t_swapx08
• control code 0x01
• control code 0x02
• control code 0x04
• control code 0x08
—
14
114
ms
—
2.4
—
ms
—
4.7
—
ms
—
9.3
—
ms
—
—
1.8
ms
—
—
25
μs
—
65
—
μs
—
870
7400
ms
—
—
30
μs
—
200
—
μs
—
70
150
μs
—
70
150
μs
—
—
30
μs
1. Assumes 25MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
Notes
2
2
1
2
1
6.4.1.3 Flash (FTFL) current and power specfications
Table 22. Flash (FTFL) current and power specfications
Symbol
I_{DD_PGM}
Description
Worst case programming current in program flash
Typ.
Unit
10
mA
6.4.1.4 Reliability specifications
Table 23. NVM reliability specifications
Symbol Description
t_nvmretp10k Data retention after up to 10 K cycles
t_nvmretp1k Data retention after up to 1 K cycles
t_nvmretp100 Data retention after up to 100 cycles
n_nvmcycp Cycling endurance
Min.
Program Flash
5
10
15
10 K
Typ.¹
50
100
100
35 K
Max.
—
—
—
—
Unit
years
years
years
cycles
Notes
2
2
2
3
K30 Sub-Family Data Sheet Data Sheet, Rev. 6, 9/2011.
32
Freescale Semiconductor, Inc.