MC9RS08LE4 Datasheet, PDF (22/30 Pages) Freescale Semiconductor, Inc – MCU Block Diagram

Flash Specifications
Table 14. Flash Characteristics (continued)
Num C
Characteristic
Symbol
Min
Typical¹
Max
Unit
V_PP current
3 C Program
Mass erase
I_{VPP_prog}
—
I_{VPP_erase}
—
—
200
μA
—
100
μA
4
D
Supply voltage for read operation
0 < f_{Bus <} 10 MHz
5
P Byte program time
V_Read
1.8
t_prog
20
—
5.5
V
—
40
μs
6
P Mass erase time
7
C Cumulative program HV time²
t_me
500
—
—
ms
t_hv
—
—
8
ms
8
C
Total cumulative HV time
(total of t_me & t_hv applied to device)
t_{hv_total}
—
9 D HVEN to program setup time
t_pgs
10
10 D PGM/MASS to HVEN setup time
t_nvs
5
11 D HVEN hold time for PGM
t_nvh
5
—
2
hours
—
—
μs
—
—
μs
—
—
μs
12 D HVEN hold time for MASS
t_nvh1
100
—
—
μs
13 D V_PP to PGM/MASS setup time
t_vps
20
—
—
ns
14 D HVEN to V_PP hold time
15
D V_PP rise time³
16 D Recovery time
t_vph
20
t_vrs
200
t_rcv
1
—
—
ns
—
—
ns
—
—
μs
17
D
Program/erase endurance
T_L to T_H = –40°C to 85°C
—
1000
—
—
cycles
18 C Data retention
t_{D_ret}
100
—
—
years
1 _{Typicals are measured at 25 °C.}
2 _{thv is the cumulative high voltage programming time to the same row before next erase. Same address can not be}
programmed more than twice before next erase.
3 _{Fast VPP rise time may potentially trigger the ESD protection structure, which may result in over-current flowing into the}
pad and cause permanent damage to the pad. External filtering for the V_PP power source is recommended. An example
V_PP filter is shown in Figure 19.
Figure 19. Example V_PP Filtering
MC9RS08LE4 MCU Data Sheet, Rev. 2
22
Freescale Semiconductor