MC9RS08LE4 Datasheet, PDF (21/30 Pages) Freescale Semiconductor, Inc – MCU Block Diagram

Flash Specifications
Table 13. 10-bit ADC Characteristics (V_REFH = V_DDAD, V_REFL = V_SSAD) (continued)
Nu
m
C
Characteristic
Conditions
Symb
Min Typical¹ Max
Unit
Conversion time Short sample (ADLSMP = 0)
—
7
P (Including
t_ADC
sample time)
Long sample (ADLSMP = 1)
—
20
40
—
ADCK
—
cycles
Short sample (ADLSMP = 0)
—
8
P Sample time
t_ADS
Long sample (ADLSMP = 1)
—
3.5
23.5
—
ADCK
—
cycles
Total
9
P unadjusted
error
10-bit mode
8-bit mode
—
E_TUE
—
±1
±2.5
LSB²
±0.5
±1.0
10
P
Differential
non-linearity
10-bit mode
8-bit mode
—
DNL
—
±0.5
±1.0
±0.3
±0.5
Monotonicity and no-missing-codes guaranteed
LSB²
11
C
Integral
non-linearity
10-bit mode
8-bit mode
—
±0.5
±1.0
INL
LSB²
—
±0.3
±0.5
10-bit mode
12
P Zero-scale error
8-bit mode
—
±0.5
±1.5
E_ZS
LSB²
—
±0.5
±0.5
13
P
Full-scale error
V_ADIN = V_DDA
10-bit mode
8-bit mode
—
±0.5
±1.5
E_FS
LSB²
—
±0.5
±0.5
14
D
Quantization
error
10-bit mode
8-bit mode
—
E_Q
—
—
±0.5
LSB²
—
±0.5
Input leakage 10 bit mode
15
D
error
pad leakage³ *
8 bit mode
R_AS
—
±0.2
±2.5
E_IL
LSB²
—
±0.1
±1
1 _{Typical values assume VDDAD = 5.0 V, Temp = 25 °C, fADCK = 1.0 MHz unless otherwise stated. Typical values are for}
reference only and are not tested in production.
2 _{1 LSB = (VREFH – VREFL)/2}N
3 _{Based on input pad leakage current. Refer to pad electrical.}
3.12 Flash Specifications
This section provides details about program/erase times and program-erase endurance for the flash
memory. For detailed information about program/erase operations, see the reference manual.
Table 14. Flash Characteristics
Num C
Characteristic
1 D Supply voltage for program/erase
2 D Program/Erase voltage
Symbol
Min
Typical¹
Max
Unit
V_DD
2.7
V_PP
11.8
—
5.5
V
12
12.2
V
MC9RS08LE4 MCU Data Sheet, Rev. 2
Freescale Semiconductor
21