MC68HC908QY4A_10 Datasheet, PDF (170/200 Pages) Freescale Semiconductor, Inc – M68HC08 Microcontrollers

Electrical Specifications
16.15 Memory Characteristics
Characteristic
Symbol
Min
Typ
Max
Unit
RAM data retention voltage ⁽¹⁾
V_RDR
1.3
—
—
V
FLASH program bus clock frequency
—
1
—
—
MHz
FLASH PGM/ERASE supply voltage (V_DD)
V_PGM/ERASE
2.7
—
5.5
V
FLASH read bus clock frequency
f_Read(2)
0
—
8M
Hz
FLASH page erase time
<1 K cycles
>1 K cycles
t_Erase
0.9
1
1.1
ms
3.6
4
5.5
FLASH mass erase time
t_MErase
4
—
—
ms
FLASH PGM/ERASE to HVEN setup time
t_NVS
10
—
—
μs
FLASH high-voltage hold time
t_NVH
5
—
—
μs
FLASH high-voltage hold time (mass erase)
t_NVHL
100
—
—
μs
FLASH program hold time
t_PGS
5
—
—
μs
FLASH program time
t_PROG
30
—
40
μs
FLASH return to read time
t_RCV(3)
1
—
—
μs
FLASH cumulative program hv period
t_HV(4)
—
—
4
ms
FLASH endurance⁽⁵⁾
—
10 k
100 k
—
Cycles
FLASH data retention time⁽⁶⁾
—
15
100
—
Years
1. Values are based on characterization results, not tested in production.
2. f_Read is defined as the frequency range for which the FLASH memory can be read.
3. t_RCV is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by clear-
ing HVEN to 0.
4. t_HV is defined as the cumulative high voltage programming time to the same row before next erase.
t_HV must satisfy this condition: t_NVS + t_NVH + t_PGS + (t_PROG x 32) ≤ t_HV maximum.
5. Typical endurance was evaluated for this product family. For additional information on how Freescale Semiconductor
defines Typical Endurance, please refer to Engineering Bulletin EB619.
6. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25•C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines Typical Data
Retention, please refer to Engineering Bulletin EB618.
MC68HC908QYA/QTA Family Data Sheet, Rev. 3
170
Freescale Semiconductor