33982B_09 Datasheet, PDF (12/36 Pages) Freescale Semiconductor, Inc – Single Intelligent High-current Self-protected Silicon High Side Switch (2.0 mΩ)

ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 5. Dynamic Electrical Characteristics (continued)
Characteristics noted under conditions 4.5 V ≤ V_DD ≤ 5.5 V, 6.0 V ≤ V_PWR ≤ 27 V, -40°C ≤ T_A ≤ 125°C, unless otherwise noted.
Typical values noted reflect the approximate parameter mean at T_A = 25°C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
POWER OUTPUT TIMING (CONTINUED)
Over-current Low Detection Blanking Time (OCLT [1:0])
00
01
10
11
t _OCL0
t _OCL1
t _OCL2
t _OCL3
ms
108
155
202
7.0
10
13
0.8
1.2
1.6
0.08
0.15
0.25
Over-current High Detection Blanking Time
CS to CSNS Valid Time⁽²³⁾
Output Switching Delay Time (OSD [2:0])
000
001
010
011
100
101
110
111
Watchdog Timeout (WD [1:0])⁽²⁴⁾
00
01
10
11
SPI INTERFACE CHARACTERISTICS
t _OCH
t _CNSVAL
t _OSD0
t _OSD1
t _OSD2
t _OSD3
t _OSD4
t _OSD5
t _OSD6
t _OSD7
t _WDTO0
t _WDTO1
t _WDTO2
t _WDTO3
1.0
–
–
52
105
157
210
262
315
367
434
207
1750
875
10
–
0.0
75
150
225
300
375
450
525
620
310
2500
1250
20
μs
10
μs
ms
–
95
195
293
390
488
585
683
ms
806
403
3250
1625
Recommended Frequency of SPI Operation
Required Low-state Duration for RST⁽²⁵⁾
f _SPI
–
–
3.0
MHz
t _WRST
–
50
167
ns
Notes
23. Time necessary for the CSNS to be within ±5% of the targeted value.
24. Watchdog timeout delay measured from the rising edge of WAKE to RST from a sleep state condition to output turn-ON with the output
driven OFF and FSI floating. The values shown are for WDR setting of [00]. The accuracy of t_WDTO is consistent for all configured
watchdog timeouts.
25. RST low duration measured with outputs enabled and going to OFF or disabled condition.
33982
12
Analog Integrated Circuit Device Data
Freescale Semiconductor