34704_11 Datasheet, PDF (11/54 Pages) Freescale Semiconductor, Inc – Multiple Channel DC-DC Power Management IC

ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 4. Static Electrical Characteristics (continued)
Characteristics noted under conditions 2.7 V ≤ V_IN ≤ 5.5 V, -20°C ≤ T_A ≤ 85°C, GND = 0 V, unless otherwise noted. Typical
values noted reflect the approximate parameter means at T_A = 25°C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
REGULATOR 4
Output Voltage Range
Output Accuracy
Line/Load Regulation⁽¹³⁾
Feedback Reference Voltage
Dynamic Voltage Scaling Range
Dynamic Voltage Scaling Step Size
Continuous Output Current⁽¹³⁾
Over-current Limit (Detected in buck high side FET)
Short-circuit Current Limit (Detected in buck high side FET)
Over-current Limit Accuracy
V_OUT
-
0.6
1.8
3.6
V
-2.0
-
2.0
%
REG_LN/LD
-1.0
-
1.0
%
V_FB
-
0.600⁽¹⁴⁾
-
V
V_DYN
-10
-
10
%
V_{DYN_STEP}
-
1.0
-
%
I_OUT
-
100
300
mA
I_{LIM_ION}
-
1.5
-
A
I_{SHORT_ION}
-
2.25
-
A
-
-20
-
20
%
N-CH Buck Switch Power MOSFET R_DS(ON)
N-CH Buck Synch. Power MOSFET R_DS(ON)
N-CH Boost Switch Power MOSFET R_DS(ON)
N-CH Boost Synch. Power MOSFET R_DS(ON)
Discharge MOSFET R_DS(ON)
Thermal Shutdown Threshold⁽¹³⁾
Thermal Shutdown Hysteresis⁽¹³⁾
PVIN4 Leakage Current (Off State) @25°C
SW4D Leakage Current (Off State) @25°C
SW4U Leakage Current (Off State) @25°C
REGULATOR 5
R_DS(ON)-_SW
-
R_DS(ON)-_SY
-
R_DS(ON)-_SW
-
R_DS(ON)-_SY
-
R_DS(ON)-_DIS
-
T_SD
-
T_SD-HYS
-
I_{PVIN4_LKG}
-
I_{SW4D_LKG}
-
I_{SW4U_LKG}
-
200
-
mΩ
600
-
mΩ
200
-
mΩ
600
-
mΩ
70
-
Ω
170
-
°C
25
-
°C
-
1.0
μA
-
1.0
μA
-
1.0
μA
Output Voltage Range
Output Accuracy
Line/Load Regulation⁽¹³⁾
Feedback Reference Voltage
Dynamic Voltage Scaling Range
Dynamic Voltage Scaling Step Size
Continuous Output Current⁽¹³⁾
Over-current Limit (Detected in buck high side FET)
Short-circuit Current Limit (Detected in buck high side FET)
Over-current Limit Accuracy
V_OUT
-
0.6
3.3
3.6
V
-2.0
-
2.0
%
REG_LN/LD
-1.0
-
1.0
%
V_FB
-
0.600⁽¹⁴⁾
-
V
V_DYN
-17.5
-
17.5
%
V_{DYN_STEP}
-
2.5
-
%
I_OUT
-
150
500
mA
I_{LIM_ION}
-
1.4
-
A
I_{SHORT_ION}
-
2.1
-
A
-
-20
-
20
%
N-CH Buck Switch Power MOSFET R_DS(ON)
R_DS(ON)-_SW
-
120
-
mΩ
N-CH Buck Synch. Power MOSFET R_DS(ON)
R_DS(ON)-_SY
-
1000
-
mΩ
N-CH Boost Switch Power MOSFET R_DS(ON)
R_DS(ON)-_SW
-
120
-
mΩ
N-CH Boost Synch. Power MOSFET R_DS(ON)
R_DS(ON)-_SY
-
120
-
mΩ
Discharge MOSFET R_DS(ON)
Thermal Shutdown Threshold⁽¹³⁾
Thermal Shutdown Hysteresis⁽¹³⁾
R_DS(ON)-_DIS
-
70
-
Ω
T_SD
-
170
-
°C
T_SD-HYS
-
25
-
°C
Notes:
13. Guaranteed by Design
14. V_FB is 0.6V when the part ist powered up and no DVS is changed. DVS is achieved by modifying V_FB reference.
Analog Integrated Circuit Device Data
Freescale Semiconductor
34704
11