34704_11 Datasheet, PDF (10/54 Pages) Freescale Semiconductor, Inc – Multiple Channel DC-DC Power Management IC

ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 4. Static Electrical Characteristics (continued)
Characteristics noted under conditions 2.7 V ≤ V_IN ≤ 5.5 V, -20°C ≤ T_A ≤ 85°C, GND = 0 V, unless otherwise noted. Typical
values noted reflect the approximate parameter means at T_A = 25°C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
REGULATOR 2
Output Voltage Range
Output Accuracy
Line/Load Regulation⁽¹¹⁾
Feedback Reference Voltage
Dynamic Voltage Scaling Range
Dynamic Voltage Scaling Step Size
Continuous Output Current⁽¹¹⁾
Over-current Limit (Detected in buck high side FET)
Short-circuit Current Limit (Detected in buck high side FET)
Battery Over-current Limit Accuracy
V_OUT
-
0.6
3.3
3.6
V
-2.0
-
2.0
%
REG_LN/LD
-1.0
-
1.0
%
V_FB
-
0.600⁽¹²⁾
-
V
V_DYN
-17.5
-
17.5
%
V_{DYN_STEP}
-
2.5
-
%
I_OUT
-
200
500
mA
I_{LIM_ION}
-
1.4
-
A
I_{SHORT_ION}
-
2.1
-
A
-
-20
-
20
%
N-CH Buck Switch Power MOSFET R_DS(ON)
N-CH Buck Synch. Power MOSFET R_DS(ON)
N-CH Boost Switch Power MOSFET R_DS(ON)
N-CH Boost Synch. Power MOSFET R_DS(ON)
Discharge MOSFET R_DS(ON)
Thermal Shutdown Threshold⁽¹¹⁾
Thermal Shutdown Hysteresis⁽¹¹⁾
PVIN2 Leakage Current (Off State) @25°C
SW2D Leakage Current (Off State) @25°C
SW2U Leakage Current (Off State) @25°C
REGULATOR 3
R_DS(ON)-_SW
-
R_DS(ON)-_SY
-
R_DS(ON)-_SW
-
R_DS(ON)-_SY
-
R_DS(ON)-_DIS
-
T_SD
-
T_SD-HYS
-
I_{PVIN2G_LKG}
-
I_{SW2D_LKG}
-
I_{SW2U_LKG}
-
120
-
mΩ
1000
-
mΩ
120
-
mΩ
120
-
mΩ
70
-
Ω
170
-
°C
25
-
°C
-
1.0
μA
-
1.0
μA
-
1.0
μA
Output Voltage Range
Output Accuracy
Line/Load Regulation⁽¹¹⁾
Feedback Reference Voltage
Dynamic Voltage Scaling Range
Dynamic Voltage Scaling Step Size
Continuous Output Current⁽¹¹⁾
Over-current Limit (Detected in buck high side FET)
Short-circuit Current Limit (Detected in buck high side FET)
Over-current Limit Accuracy
V_OUT
-
0.6
1.2
1.8
V
-4.0
-
4.0
%
REG_LN/LD
-1.0
-
1.0
%
V_FB
-
0.600⁽¹²⁾
-
V
V_DYN
-17.5
-
17.5
%
V_{DYN_STEP}
-
2.5
-
%
I_OUT
-
150
550
mA
I_{LIM_ION}
-
1.0
-
A
I_{SHORT_ION}
-
1.5
-
A
-
-20
-
20
%
N-CH Switch Power MOSFET R_DS(ON)
R_DS(ON)-_SW
-
500
-
mΩ
N-CH Synch. Power MOSFET R_DS(ON)
R_DS(ON)-_SY
-
500
-
mΩ
Discharge MOSFET R_DS(ON)
Thermal Shutdown Threshold ⁽¹¹⁾
Thermal Shutdown Hysteresis⁽¹¹⁾
R_DS(ON)-_DIS
-
70
-
Ω
T_SD
-
170
-
°C
T_SD-HYS
-
25
-
°C
PVIN3 Leakage Current (Off State) @25°C
I_{PVIN3_LKG}
-
-
1.0
μA
SW3 Leakage Current (Off State) @25°C
I_{SW3_LKG}
-
-
1.0
μA
Notes:
11. Guaranteed by Design
12. V_FB is 0.6V when the part ist powered up and no DVS is changed. DVS is achieved by modifying V_FB reference.
34704
10
Analog Integrated Circuit Device Data
Freescale Semiconductor