FNA21012A Datasheet, PDF (8/15 Pages) Fairchild Semiconductor – 1200 V Motion SPMR 2 Series

Bootstrap Diode Part
Symbol
Parameter
V_F
Forward Voltage
t_rr
Reverse-Recovery Time
Conditions
I_F = 1.0 A, T_J = 25°C
I_F = 1.0 A, dI_F / dt = 50 A / ms, T_J = 25°C
Min. Typ. Max.
-
2.2
-
-
80
-
Unit
V
ns
Control Part
Symbol Parameter
Conditions
Min. Typ. Max. Unit
I_QCCH
Quiescent V_CC Supply
Current
V_CC(UH,VH,WH) = 15 V,
IN_(UH,VH,WH) = 0 V
V_CC(UH) - COM_(H),
-
V_CC(VH) - COM_(H),
V_CC(WH) - COM_(H)
I_QCCL
V_CC(L) = 15 V, IN_{(UL,VL, WL)} = 0 V
V_CC(L) - COM_(L)
-
I_PCCH
V_CC(UH,VH,WH) = 15 V, f_PWM = 20 V_CC(UH) - COM_(H),
-
kHz, Duty = 50%, Applied to one V_CC(VH) - COM_(H),
Operating V_CC Supply PWM Signal Input for High-Side
V_CC(WH) - COM_(H)
I_PCCL ^Current
V_CC(L) = 15V, f_PWM = 20 kHz, Duty = V_CC(L) - COM_(L)
-
50%, Applied to one PWM Signal
Input for Low-Side
-
0.15 mA
-
5.00 mA
-
0.30 mA
-
8.50 mA
I_QBS
Quiescent V_BS Supply V_BS = 15 V, IN_{(UH, VH, WH)} = 0 V
Current
V_B(U) - V_S(U),
V_B(V) - V_S(V),
V_B(W) - V_S(W)
-
-
0.30 mA
I_PBS Operating V_BS Supply V_CC = V_BS = 15 V, f_PWM = 20 kHz, V_B(U) - V_S(U),
Current
Duty = 50%, Applied to one PWM V_B(V) - V_S(V),
Signal Input for High-Side
V_B(W) - V_S(W)
-
-
4.50 mA
V_FOH Fault Output Voltage V_CC = 15 V, V_SC = 0 V, V_FO Circuit: 4.7 kW to 5 V Pull-up 4.5
-
-
V
V_FOL
V_CC = 15 V, V_SC = 1 V, V_FO Circuit: 4.7 kW to 5 V Pull-up
-
-
0.5
V
I_SEN Sensing Current of V_CC = 15 V, V_IN = 5 V, R_SC = 0 W, No I_C = 10 A
Each Sense IGBT
Connection of Shunt Resistor at
N_U,V,W Terminal
-
7
-
mA
V_SC(ref) Short Circuit Trip Level V_CC = 15 V (Note 7)
C_SC - COM_(L)
0.43 0.50 0.57
V
I_SC Short Circuit Current R_SC = 68 W (± 1%), No Connection of Shunt Resistor at -
20
-
A
Level for Trip
N_U,V,W Terminal (Note 7)
UV_CCD Supply Circuit Under- Detection Level
UV_CCR ^{Voltage Protection}
Reset Level
10.3
-
12.8
V
10.8
-
13.3
V
UV_BSD
Detection Level
9.5
-
12.0
V
UV_BSR
Reset Level
10.0
-
12.5
V
t_FOD Fault-Out Pulse Width C_FOD = Open
(Note 8)
50
-
-
ms
C_FOD = 2.2 nF
1.7
-
-
ms
V_IN(ON) ON Threshold Voltage Applied between IN_{(UH, VH, WH)} - COM_(H), IN_{(UL, VL, WL)} - -
-
2.6
V
V_IN(OFF) OFF Threshold Voltage ^COM(L)
0.8
-
-
V
R_TH Resistance of
Thermistor
at T_TH = 25°C
at T_TH = 100°C
See Figure 7
(Note 9)
-
47
-
kW
-
2.9
-
kW
Notes:
7. Short-circuit current protection functions only at the low-sides because the sense current is divided from main current at low-side IGBTs. Inserting the shunt resistor for moni-
toring the phase current at N_U, N_V, N_W terminal, the trip level of the short-circuit current is changed.
8. The fault-out pulse width t_FOD depends on the capacitance value of C_FOD according to the following approximate equation : t_FOD = 0.8 x 10⁶ x C_FOD [s].
9. T_TH is the temperature of thermistor itself. To know case temperature (T_C), conduct experiments considering the application.
©2013 Fairchild Semiconductor Corporation
8
FNA21012A Rev. C0
www.fairchildsemi.com