FNA21012A Datasheet, PDF (5/15 Pages) Fairchild Semiconductor – 1200 V Motion SPMR 2 Series

Absolute Maximum Ratings (T_J = 25°C, unless otherwise specified.)
Inverter Part
Symbol
Parameter
Conditions
V_PN
V_PN(Surge)
V_CES
± I_C
± I_CP
Supply Voltage
Supply Voltage (Surge)
Collector - Emitter Voltage
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
P_C
Collector Dissipation
T_J
Operating Junction Temperature
Applied between P - N_U, N_V, N_W
Applied between P - N_U, N_V, N_W
T_C = 25°C, T_J £ 150°C (Note 4)
T_C = 25°C, T_J £ 150°C, Under 1 ms Pulse
Width (Note 4)
T_C = 25°C per One Chip (Note 4)
Rating
900
1000
1200
10
20
93
-40 ~ 150
Unit
V
V
V
A
A
W
°C
Control Part
Symbol
Parameter
V_CC
Control Supply Voltage
V_BS
High-Side Control Bias Voltage
V_IN
Input Signal Voltage
V_FO
Fault Output Supply Voltage
I_FO
Fault Output Current
V_SC
Current Sensing Input Voltage
Conditions
Rating
Applied between V_CC(H), V_CC(L) - COM
Applied between V_B(U) - V_S(U), V_B(V) - V_S(V),
V_B(W) - V_S(W)
Applied between IN_(UH), IN_(VH), IN_(WH),
IN_(UL), IN_(VL), IN_(WL) - COM
Applied between V_FO - COM
Sink Current at V_FO pin
Applied between C_SC - COM
20
20
-0.3 ~ V_CC+0.3
-0.3 ~ V_CC+0.3
2
-0.3 ~ V_CC+0.3
Unit
V
V
V
V
mA
V
Bootstrap Diode Part
Symbol
Parameter
V_RRM
I_F
I_FP
Maximum Repetitive Reverse Voltage
Forward Current
Forward Current (Peak)
T_J
Operating Junction Temperature
Conditions
T_C = 25°C, T_J £ 150°C (Note 4)
T_C = 25°C, T_J £ 150°C, Under 1 ms Pulse
Width (Note 4)
Rating
1200
1.0
2.0
-40 ~ 150
Unit
V
A
A
°C
Total System
Symbol
Parameter
V_PN(PROT) Self-Protection Supply Voltage Limit
(Short-Circuit Protection Capability)
T_C
T_STG
V_ISO
Module Case Operation Temperature
Storage Temperature
Isolation Voltage
Conditions
V_CC = V_BS = 13.5 ~ 16.5 V, T_J = 150°C,
Non-Repetitive, < 2 ms
See Figure 2
60 Hz, Sinusoidal, AC 1 Minute, Connection
Pins to Heat Sink Plate
Rating
800
-40 ~ 125
-40 ~ 125
2500
Unit
V
°C
°C
V_rms
Thermal Resistance
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
R_th(j-c)Q
R_th(j-c)F
Junction-to-Case Thermal Resistance
(Note 5)
Inverter IGBT Part (per 1 / 6 Module) -
Inverter FWD Part (per 1 / 6 Module) -
- 1.33 °C / W
- 2.30 °C / W
Notes:
4. These values had been made an acquisition by the calculation considered to design factor.
5. For the measurement point of case temperature (T_C), please refer to Figure 2.
©2013 Fairchild Semiconductor Corporation
5
FNA21012A Rev. C0
www.fairchildsemi.com