FXLP4555MPX Datasheet, PDF (7/13 Pages) Fairchild Semiconductor – 1.8V / 3.0V SIM Card Power Supply and Level Shifter

Electrical Characteristics (Continued)
Symbol
Parameter
SIM Interface Section⁽⁴⁾
V_{CC_C} =+3.0V
(V_SEL=HIGH)
RST_C
V_{CC_C} =+1.8V
(V_SEL=LOW)
V_{CC_C} =+3.0V
(V_SEL=HIGH)
CLK_C
V_{CC_C} =+1.8V
(V_SEL=LOW)
Condition
Output RST_C V_OH at I_{RST_C}=-20µA
Output RST_C V_OL at I_{RST_C}=+200µA
Output RST_C Rise Time at
C_OUT=30pF (10% - 90%)⁽³⁾
Output RST_C Fall Time at
C_OUT=30pF (90% - 10%)⁽³⁾
Output RST_C V_OH at I_{RST_C}=-20µA
Output RST_C V_OL at I_{RST_C}=+200µA
Output RST_C Rise Time at
C_OUT=30pF (10% - 90%)⁽³⁾
Output RST_C Fall Time at
C_OUT=30pF (90% - 10%)⁽³⁾
Output Duty Cycle
Maximum Output Frequency
Output V_OH at I_{CLK_C}=-20µA
Output V_OL at I_{CLK_C}=+200µA
Output CLK_C Rise Time at
C_OUT=30pF (10% - 90%)⁽³⁾
Output CLK_C Fall Time at
C_OUT=30pF (90% - 10%)⁽³⁾
Output Duty Cycle
Maximum Output Frequency
Output V_OH at I_{CLK_C}=-20µA
Output V_OL at I_{CLK_C}=+200µA
Output CLK _C Rise Time at
C_OUT=30pF (10% - 90%)⁽³⁾
Output CLK_C Fall Time at
C_OUT=30pF (90% - 10%)⁽³⁾
Min. Typ. Max. Unit
0.9 •
V_{CC_C}
0
V_{CC_C}
V
0.4
V
1
µs
0.9 •
V_{CC_C}
0
1
µs
V_{CC_C}
V
0.4
V
1
µs
40
5
0.9 •
V_{CC_C}
0
1
60
V_{CC_C}
0.4
18
µs
%
MHz
V
V
ns
40
5
0.9 •
V_{CC_C}
0
18
60
V_{CC_C}
0.4
18
ns
%
MHz
V
V
Ns
18
ns
Continued on the following page…
© 2010 Fairchild Semiconductor Corporation
FXLP4555 • Rev. 1.0.0
7
www.fairchildsemi.com