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| FQG4902TU Datasheet, PDF (7/12 Pages) Fairchild Semiconductor – 250V Dual N & P-Channel MOSFET | |||
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Typical Characteristics : P-Channel (Continued)
1.2
1.1
1.0
0.9
â» Notes :
1.
2.
IVDG=S =-2050Vμ
A
0.8
-100
-50
0
50
100
150
200
T, Junction Temperature[oC]
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Operation in This Area
is Limited by R
DS(on)
101
100 μ s
100
1 ms
10 ms
100 ms
1s
10-1
DC
10-2
10-3
100
â» Notes :
1. TA = 25 oC
2. TJ = 150 oC
3. Single Pulse
101
102
-VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
â» Notes :
1. VGS = -10 V
2. ID = -0.27 A
0.0
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs. Temperature
0.6
0.4
0.2
0.0
25
50
75
100
125
150
TA, Ambient Temperature [â]
Figure 10. Maximum Drain Current
vs. Ambient Temperature
102
D =0.5
0 .2
101
0 .1
0 .0 5
0 .0 2
100
0 .0 1
1 0 -1
1 0 -5
1 0 -4
sin g le p u ls e
PDM
t1
t2
â» N otes :
1 . Z θ JA(t) = 9 0 â /W M a x.
2 . D u ty F ac to r, D = t1/t2
3 . T JM - T A = P DM * Z θ JA(t)
1 0 -3
1 0 -2
1 0 -1
100
101
102
103
t1, S q u a re W a v e P u ls e D u ra tio n [se c]
Figure 11. Transient Thermal Response Curve
©2002 Fairchild Semiconductor Corporation
Rev. A1, April 2002
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