FQG4902TU Datasheet, PDF (6/12 Pages) Fairchild Semiconductor – 250V Dual N & P-Channel MOSFET

Typical Characteristics : P-Channel
V
Top : -15.0^GV^S
-10.0 V
-8.0 V
-6.0 V
-5.5 V
-5.0 V
10^{0 Bottom : -4.5 V}
10^-1
10^-1
※ Notes :
1. 250μ s Pulse Test
2. T_A = 25℃
10⁰
10¹
-V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
10
8
V = -10V
GS
6
V = -20V
GS
4
2
※ Note : T = 25℃
J
0
0
2
4
6
8
10
12
-I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
800
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
600
C
iss
C
oss
400
C
※ Notes :
rss
1. V_GS = 0 V
2. f = 1 MHz
200
0
10^-1
10⁰
10¹
-V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10⁰
150℃
25℃
-55℃
10^-1
0
※ Notes :
1. V = -40V
2. 25^DS0μ s PulseTest
2
4
6
8
10
-V_GS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10⁰
10^-1
0.0
150℃ 25℃
※ Notes :
1.
2.
V25_G0Sμ=s0VPulse
Test
0.5
1.0
1.5
2.0
2.5
3.0
-V_SD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = -50V
DS
10
V = -125V
DS
V = -200V
DS
8
6
4
2
※ Note : I = -0.54 A
D
0
0
3
6
9
12
15
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2002 Fairchild Semiconductor Corporation
Rev. A1, April 2002