FQG4902TU Datasheet, PDF (3/12 Pages) Fairchild Semiconductor – 250V Dual N & P-Channel MOSFET

Electrical Characteristics (Continued)
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Drain-Source Diode Characteristics and Maximum Ratings
I_S
Maximum Continuous Drain-Source Diode Forward Current
N-Ch --
P-Ch --
-- 0.54 A
-- -0.54 A
I_SM
Maximum Pulsed Drain-Source Diode Forward Current
N-Ch --
P-Ch --
-- 4.32 A
-- -4.32 A
V_SD
Drain-Source Diode Forward Voltage V_GS = 0 V, I_S = 0.54 A
V_GS = 0 V, I_S = -0.54 A
N-Ch --
-- 1.5
V
P-Ch --
-- -5.0
V
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
V_GS = 0 V, I_S = 0.54 A,
dI_F / dt = 100 A/µs (Note 3)
N-Ch
--
--
90
189
--
--
ns
nC
V_GS = 0 V, I_S = -0.54 A,
dI_F / dt = 100 A/µs (Note 3)
P-Ch
--
--
77
210
--
--
ns
nC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. I_SD ≤ 0.54A, di/dt ≤ 200A/µs, V_DD ≤ BV_DSS, Starting T_J = 25°C
3. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
4. Essentially independent of operating temperature
5. R_θJA is the sum of the junction-to-case and case-to-ambient thermal resistance. R_θCA is determined by the user’s board design
Maximum R_θJA using the different board layouts on 3”x4.5” FR-4 PCB in a still air environment :
a. 90°C/W when mounted without any pad copper
b. 62.5°C/W when mounted on a 4.5 in² pad of 2oz copper. In such an environment, the power dissipation can be enhanced up to 2W
©2002 Fairchild Semiconductor Corporation
Rev. A1, April 2002