FQG4902TU Datasheet, PDF (2/12 Pages) Fairchild Semiconductor – 250V Dual N & P-Channel MOSFET

Electrical Characteristics
Symbol
Parameter
T_A = 25°C unless otherwise noted
Test Conditions
Type Min Typ Max Units
Off Characteristics
BV_DSS Drain-Source Breakdown Voltage
∆BV_DSS Breakdown Voltage Temperature
/ ∆T_J ^Coefficient
I_DSS
Zero Gate Voltage Drain Current
I_GSSF
I_GSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V_GS = 0 V, I_D = 250 µA
V_GS = 0 V, I_D = -250 µA
I_D = 250 µA,
Referenced to 25°C
I_D = -250 µA,
Referenced to 25°C
V_DS = 250 V, V_GS = 0 V
V_DS = 200 V, T_A = 125°C
V_DS = -250 V, V_GS = 0 V
V_DS = -200 V, T_A = 125°C
V_GS = 30 V, V_DS = 0 V
V_GS = -30 V, V_DS = 0 V
N-Ch 250 --
--
P-Ch -250 --
--
N-Ch -- 0.24 --
V
V
V/°C
P-Ch -- -0.2 -- V/°C
--
N-Ch
--
--
P-Ch
--
All
--
All
--
--
10
µA
-- 100 µA
-- -10 µA
-- -100 µA
-- 100 nA
-- -100 nA
On Characteristics
V_GS(th) Gate Threshold Voltage
V_DS = V_GS, I_D = 250 µA
N-Ch 2.0 -- 4.0
V
V_DS = V_GS, I_D = -250 µA
P-Ch -2.0 -- -4.0
V
R_DS(on) Static Drain-Source On-Resistance
V_GS = 10 V, I_D = 0.27 A
N-Ch -- 1.1 2.0
Ω
g_FS
Forward Transconductance
V_GS = -10 V, I_D = -0.27 A
P-Ch -- 1.5 2.0
Ω
V_DS = 40 V, I_D = 0.27 A
N-Ch -- 1.3 --
S
V_DS = -40 V, I_D = -0.27 A
P-Ch --
1.1
--
S
Dynamic Characteristics
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
N-Channel
V_DS = 25 V, V_GS = 0 V,
f = 1.0 MHz
P-Channel
V_DS = -25 V, V_GS = 0 V,
f = 1.0 MHz
N-Ch -- 195 250 pF
P-Ch -- 345 445 pF
N-Ch -- 40 55 pF
P-Ch -- 65 85 pF
N-Ch --
7 9.5 pF
P-Ch -- 11 14.5 pF
Switching Characteristics
t_d(on)
Turn-On Delay Time
t_r
Turn-On Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Turn-Off Fall Time
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
N-Channel
N-Ch -- 5.5 20
ns
V_DD = 125 V, I_D = 0.54 A, P-Ch -- 8.0 25
ns
R_G = 25 Ω
N-Ch -- 17 45
ns
P-Ch -- 19 50
ns
P-Channel
N-Ch --
29 70
ns
V_DD = -125 V, I_D = -0.54 A, P-Ch --
44 100
ns
R_G = 25 Ω
N-Ch --
23 55
ns
(Note 3,4) P-Ch --
33
75
ns
N-Channel
N-Ch -- 6.0 7.8 nC
V_DS = 200 V, I_D = 0.54 A, _{P-Ch -- 12.0 15.6 nC}
V_GS = 10 V
N-Ch -- 1.1 --
nC
P-Channel
P-Ch -- 2.2 --
nC
V_DS = -200 V, I_D = -0.54 A, _{N-Ch -- 2.7 --}
nC
V_GS = -10 V
(Note 3,4) _{P-Ch --}
5.3
--
nC
©2002 Fairchild Semiconductor Corporation
Rev. A1, April 2002