FGA90N33ATD_11 Datasheet, PDF (7/9 Pages) Fairchild Semiconductor – 330V, 90A PDP Trench IGBT

Typical Performance Characteristics
Figure 17. Reverse Recovery Current
4
200A/μs
3
2
di/dt = 100A/μs
1
0
5 10
20
30
40
Forward Current, I_F [A]
Figure 19. Reverse Recovery Current
40
Figure 18. Stored Charge
60
45
200A/μs
30
di/dt = 100A/μs
15
0
5 10
20
30
40
Forward Current, I_F [A]
30
200A/μs
20
di/dt = 100A/μs
10
5 10
20
30
40
Forward Current, I_F [A]
Figure 20.Transient Thermal Impedance of IGBT
1
0.5
0.1 ^0.2
0.1
0.05
0.02
0.01
0.01 _{single pulse}
0.001
1E-5
0.0001
P_DM
t₁
t₂
Duty Factor, D = t1/t2
Peak T_j = Pdm x Zthjc + T_C
0.001
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
FGA90N33ATD Rev. C0
7
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