FGA90N33ATD_11 Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 330V, 90A PDP Trench IGBT

FGA90N33ATD
330V, 90A PDP Trench IGBT
Features
• High current capability
• Low saturation voltage: V_CE(sat) =1.1V @ I_C = 20A
• High input impedance
• Fast switching
• RoHS compliant
Applications
• PDP System
August 2011
General Description
Using Novel Trench IGBT Technology, Fairchild’s new series of
trench IGBTs offer the optimum performance for PDP applica-
tions where low conduction and switching losses are essential.
C
GCE
TO-3P
Absolute Maximum Ratings
Symbol
V_CES
V_GES
I_C
I_{C pulse(1)}
I_{C pulse(2)}
P_D
T_J
T_stg
T_L
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Pulsed Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ T_C = 25^oC
@ T_C = 25^oC
@ T_C = 25^oC
@ T_C = 25^oC
@ T_C = 100^oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
R_θJC(IGBT)
R_θJC(Diode)
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Notes:
(1) Repetitive test , Pulse width=100usec , Duty=0.1
(2) Half sine wave , D<0.01, Pulse width<5usec
*I_C pluse limited by max Tj
©2011 Fairchild Semiconductor Corporation
1
FGA90N33ATD Rev. C0
G
E
Ratings
330
± 30
90
220
330
223
89
-55 to +150
-55 to +150
300
Typ.
-
-
-
Max.
0.56
1.16
40
Units
V
V
A
A
A
W
W
o_C
o_C
o_C
Units
o_C/W
o_C/W
o_C/W
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