FGA90N33ATD_11 Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – 330V, 90A PDP Trench IGBT

Electrical Characteristics of the Diode T_C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
V_FM
Diode Forward Voltage
I_F = 10A
T_C = 25^oC
T_C = 125^oC
t_rr
Diode Reverse Recovery Time
T_C = 25^oC
T_C = 125^oC
I_rr
Diode Peak Reverse Recovery ^IF ^{=10A, dI/dt = 200A/μs}
T_C = 25^oC
Current
T_C = 125^oC
Q_rr
Diode Reverse Recovery Charge
T_C = 25^oC
T_C = 125^oC
Min.
-
-
-
-
-
-
-
-
Typ.
1.1
0.96
23
36
2.8
5.1
32
91
Max
1.5
-
-
-
-
-
-
-
Units
V
ns
A
nC
FGA90N33ATD Rev. C0
3
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