FGA90N33ATD_11 Datasheet, PDF (4/9 Pages) Fairchild Semiconductor – 330V, 90A PDP Trench IGBT

Typical Performance Characteristics
Figure 1. Typical Output Characteristics
160
T_C = 25^oC
20V
15V
120
12V
10V
9V
8V
80
7V
40
V_GE = 6V
0
0
1
2
3
4
5
Collector-Emitter Voltage, V_CE [V]
Figure 3. Typical Saturation Voltage
Characteristics
160
Common Emitter
V_GE = 15V
120
T_C = 25^oC
T_C = 125^oC
80
Figure 2. Typical Output Characteristics
160
T_C = 125^oC
20V
15V
120
12V
10V
9V
8V
7V
80
40
V_GE = 6V
0
0
1
2
3
4
5
Collector-Emitter Voltage, V_CE [V]
Figure 4. Transfer Characteristics
160
Common Emitter
V_CE = 20V
T_C = 25^oC
120 _{TC = 125}o_C
80
40
40
0
0
1
2
3
4
Collector-Emitter Voltage, V_CE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
2.0
Common Emitter
V_GE = 15V
1.8
90A
1.6
1.4
1.2
40A
1.0
I_C = 20A
0.8
25
50
75
100
125
Collector-EmitterCase Temperature, T_C [^oC]
0
0
2
4
6
8
10 12
Gate-Emitter Voltage,V_GE [V]
Figure 6. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 25^oC
16
12
8
90A
4
40A
I_C = 20A
0
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
FGA90N33ATD Rev. C0
4
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