FMM6G30US60 Datasheet, PDF (6/9 Pages) Fairchild Semiconductor – Compact & Complex Module

15
C o m m o n E m itt e r
R = 10
12
L
Ω
T = 25 oC
C
9
V = 100 V
CC
300 V
200 V
6
3
0
0
20
40
60
80
100
G ate C h arg e, Q [n C ]
g
Fig 13. Gate Charge Characteristics
90
Common Cathode
80 ^VGE ^{= 0V}
T_C = 25℃
70 ^TC ^{= 125℃}
60
50
40
30
20
10
0
0
1
2
3
4
Forward Voltage, V_F [V]
Fig 15. Forward Characteristics
100
10
1
Single Nonrepetitive
Pulse T_J ≤ 125℃
V_GE = 15V
0.1 ^{RG = 15 Ω}
0
100 200 300 400 500 600 700
Collector-Emitter Voltage, V_CE [V]
Fig 14. RBSOA Characteristics
20
10
T_rr
I_rr
1
0.5
5
Common Cathode
di/dt = 60A/us
T_C = 25℃
T_C = 100℃
10
15
20
25
30
Forward Current, I_F [A]
Fig 16. Reverse Recovery Characteristics
1000
100
10
T_C = 125℃
1
0.1
25℃
0.0 1
1E-3
0
400
800
1200
1600
V_R, Reverse Voltage [V]
Fig 17. Rectifier( Converter ) Characteristics
©2003 Fairchild Semiconductor Corporation
100
TC =125℃
25℃
10
1
0.1
0.4
0.6
0.8
1.0
1.2
1.4
VF, Forward Voltage [V]
Fig 18. Rectifier( Converter ) Characteristics
FMM6G30US60 Rev. A