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FMM6G30US60 Datasheet, PDF (2/9 Pages) Fairchild Semiconductor – Compact & Complex Module
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Electrical Characteristics of IGBT @ Inverter TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min. Typ.
Max.
Units
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown
Voltage
Collector Cut-Off Current
Gate - Emitter Leakage Current
VGE = 0V, IC = 250uA
VGE = 0V, IC = 1mA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
VCE(sat)
Gate - Emitter Threshold Voltage
Collector to Emitter Saturation Voltage
IC = 30mA, VCE = VGE
IC = 30A, VGE = 15V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
td(on)
tr
td(off)
tf
Eon
Eoff
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Tsc
Short Circuit Withstand Time
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector Charge
VCC = 300 V, IC = 30A,
RG = 15Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 300 V, IC = 30A,
RG = 15Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCC = 300 V, VGE = 15V
@ TC = 100°C
VCE = 300 V, IC = 30A,
VGE = 15V
600
--
--
V
--
0.6
--
V/°C
--
--
250
uA
--
-- ± 100 nA
5.0
6.5
8.5
V
--
2.1 2.7
V
--
2100
--
pF
--
270
--
pF
--
36
--
pF
--
110 150
ns
--
90 200
ns
--
150 200
ns
--
130 250
ns
--
0.9
--
mJ
--
0.58
--
mJ
--
100 150
ns
--
90 200
ns
--
150 200
ns
--
200 400
ns
--
0.98
--
mJ
--
0.9
--
mJ
10
--
--
us
--
90
150
nC
--
20
40
nC
--
35
70
nC
©2003 Fairchild Semiconductor Corporation
FMM6G30US60 Rev. A
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