FMM6G30US60 Datasheet, PDF (5/9 Pages) Fairchild Semiconductor – Compact & Complex Module

1000
Common Emitter
V_CC = 300V, V_GE = ± 15V
I_C = 30A
T_C = 25℃ ━━
T_C = 125℃ ------
Ton
Tr
100
20
40
60
80
100
G ate R e sista n c e, R g [ ]
Ω
Fig 7. Turn-On Characteristics vs.
Gate Resistance
10000
Common Emitter
V_CC = 300V, V_GE = ± 15V
I = 30A
C
T_C = 25℃ ━━
T = 125℃ ------
C
Eon
1000
E o ff
100
20
40
60
80
100
G ate R e sista n c e, R g [ ]
Ω
Fig 9. Switching Loss vs. Gate Resistance
Common Emitter
V_CC = 300V, V_GE = ± 15V
I_C = 30A
1 0 0 0 T_C = 25℃ ━━
T_C = 125℃ ------
T o ff
Tf
100
20
40
60
80
100
G ate R e sista n c e, R g [ ]
Ω
Fig 8. Turn-Off Characteristics vs.
Gate Resistance
1000
Common Emitter
V_GE = ± 15V, R_G = 15Ω
T_C = 25℃ ━━
T_C = 125℃ ------
Ton
Tr
100
20
30
40
50
60
C o ll e c t o r C u r r e n t, I [ A ]
C
Fig 10. Turn-On Characteristics vs.
Collector Current
1000
Common Emitter
V_GE = ± 15V, R_G = 15Ω
T = 25℃ ━━
C
T_C = 125℃ ------
T o ff
Tf
100
20
30
40
50
60
C o ll e c t o r C u rr e n t, I [ A ]
C
Fig 11. Turn-Off Characteristics vs.
Collector Current
©2003 Fairchild Semiconductor Corporation
10000
Common Emitter
V_GE = ± 15V, R_G = 15Ω
T_C = 25℃ ━━
T_C = 125℃ ------
1000
Eon
E o ff
100
20
30
40
50
60
C o ll e c t o r C u r r e n t, I [ A ]
C
Fig 12. Switching Loss vs. Collector Current
FMM6G30US60 Rev. A