FMM6G30US60 Datasheet, PDF (4/9 Pages) Fairchild Semiconductor – Compact & Complex Module

120
Common Emitter
1 0 0 _{VGE = 15 V}
T_C = 25℃ ━━
8 0 ^{TC = 125℃ ------}
60
40
20
0
1
10
C o ll e c t o r - E m itt e r V o lt a g e , V
[V]
C E ( s a t)
Fig 1. Typical Output Characteristics
100
Common Emitter
80
T_C = 125^oC
15V
16V
60
18V
20V
40
14V 12V
V_GE = 10V
20
0
0
1
2
3
4
5
6
C o ll e c t o r - E m itt e r V o lt a g e , V
[V]
C E ( s a t)
Fig 3. Typical Saturation Voltage
Characteristics
5
1
0.1
0.01
IGBT :
0.005
DIODE :
10^-5
10^-4
10^-3
10^-2
10^-1
10⁰
10¹
Rectangular Pulse Duration [sec]
Fig 5. Transient Thermal Impedance
©2003 Fairchild Semiconductor Corporation
100
Common Emitter
80
T_C = 25^oC
15V
16V
60
18V
20V
40
20
14V 12V
V_GE = 10V
0
0
1
2
3
4
5
6
C o ll e c t o r - E m itt e r V o lt a g e , V
[V]
C E ( s a t)
Fig 2. Typical Saturation Voltage
Characteristics
4.0
Common Emitter
3.5
V_GE = 15 V
3.0
2.5
2.0
1.5
1.0
-50
0
50
100
C a s e T e m p erature, T [o C ]
C
60 A
30 A
15 A
150
Fig 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
5000
Cie s
4000
C oes
3000
C re s
2000
C o m m o n E m itt e r
V = 0 V, f = 1 M H z
GE
T = 25 oC
C
1000
0
0.1
1
10
C o ll e c t o r - E m itt e r V o lt a g e , V [ V ]
CE
Fig 6. Capacitance Characteristics
FMM6G30US60 Rev. A