FGPF30N30D Datasheet, PDF (6/9 Pages) Fairchild Semiconductor – 300V, 30A PDP IGBT

Typical Performance Characteristics (Continued)
Figure 13. Turn-On Characteristics vs.
Collector Current
Common Emitter
V_GE = 15V, R_G = 20Ω
100 _{TC = 25}^o_C
T_C = 125^oC
t_r
Figure 14. Turn-Off Characteristics vs.
Collector Current
500
t_f
100
t_d(off)
t_d(on)
10
5
10
15
20
25
30
Collector Current, I_C [A]
Figure 15. Switching Loss vs Gate Resistance
Common Emitter
V_GE = 15V, R_G = 20Ω
T_C = 25^oC
T_C = 125^oC
5
10
15
20
25
30
Collector Current, I_C [A]
Figure 16. Switching Loss vs Collector Current
500
1000
E_off
100
E_on
10
0
Common Emitter
V_CC = 200V, V_GE = 15V
I_C = 20A
T_C = 25^oC
T_C = 125^oC
10 20 30 40 50 60 70
Gate Resistance, R_G [Ω]
Figure 17. Transient Thermal Impedance of IGBT
100
10
1
0
E_on
E_off
Common Emitter
V_GE = 15V, R_G = 20Ω
T_C = 25^oC
T_C = 125^oC
5
10
15
20
25
30
Collector Current, I_C [A]
10
1
0 .1
0 .0 1
0 .5
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
1E -3
1 E -5
1 E -4
1E -3
0 .0 1
0 .1
R e c ta n g u la r P u ls e D u ra tio n [s e c ]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + T_C
1
10
6
FGPF30N30D Rev. A
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