FGPF30N30D Datasheet, PDF (5/9 Pages) Fairchild Semiconductor – 300V, 30A PDP IGBT

Typical Performance Characteristics (Continued)
Figure 7. Saturation Voltage vs.V_GE
20
Common Emitter
T = 125^oC
16
C
Figure 8. Capacitance Characteristics
2500
1000
C_ies
12
8
4
30A
20A
0
I_C = 10A
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
Figure 9. Gate Charge Characteristics
15
Common Emitter
R_L = 10Ω
12 ^TC ^{= 25oC}
200V
V_cc = 100V
9
6
3
0
0
8
16
24
32
40
Gate Charge, Q_g [nC]
Figure 11. Turn-On Characteristics vs.
Gate Resistance
C_oes
100
C_res
Common Emitter
V_GE = 0V, f = 1MHz
T_C = 25^oC
10
0
5
10
15
20
25
30
Collector-Emitter Voltage, V_CE [V]
Figure 10. SOA Characteristics
200
100
50us
100us
1ms
10
DC Operation
1
Single Nonrepetitive
0.1 ^{Pulse Tc=25oC}
Curves must be derated
linearly with increase
in temperature
0.01
0.1
1
10
100
Collector-Emitter Voltage, V_CE [V]
Figure 12. Turn Off Characteristics vs.
Gate Resistance
1000
100
t_r
1000
t_f
10
1
0
td(on)
Common Emitter
V_CC = 200V, V_GE = 15V
I_C = 20A
T_C = 25^oC
T_C = 125^oC
20
40
60
80
100
Gate Resistance, R_G [Ω]
100
10
0
t_d(off)
Common Emitter
V_CC = 200V, V_GE = 15V
I_C = 20A
T_C = 25^oC
T_C = 125^oC
10 20 30 40 50 60 70
Gate Resistance, R_G [Ω]
5
FGPF30N30D Rev. A
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