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FGPF30N30D Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – 300V, 30A PDP IGBT
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Electrical Characteristics of DIODE TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
VFM
Diode Forward Voltage
IF = 10A
trr
Diode Reverse Recovery Time
IF = 10A
dI/dt = 200A/µs
Irr
Diode Peak Reverse Recovery Cur-
rent
Qrr
Diode Reverse Recovery Charge
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
Min.
--
--
--
--
--
--
--
--
Typ.
1.1
0.9
21
35
2.8
5.6
29.4
98
Max.
1.4
--
--
--
--
--
--
--
Units
V
ns
A
nC
3
FGPF30N30D Rev. A
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