FGPF30N30D Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 300V, 30A PDP IGBT

FGPF30N30D
300V, 30A PDP IGBT
Features
• High Current Capability
• Low saturation voltage: V_{CE(sat) =}1.4V @ I_C = 20A
• High Input Impedance
• Fast switching
• RoHS Complaint
Application
. PDP System
April 2007
General Description
Employing Unified IGBT Technology, Fairchild's PDP IGBTs
provides low conduction and switching loss. FGPF30N30D
offers the optimum solution for PDP applications where low-
condution loss is essential.
G
TO-220F
1
1.Gate 2.Collector 3.Emitter
Absolute Maximum Ratings
Symbol
V_CES
V_GES
I_{C pulse(1)}
I_F
I_FM
P_D
T_J
T_stg
T_L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ T_C = 25^oC
@ T_C = 100°C
@ T_C = 25^oC
@ T_C = 100^oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
R_θJC(IGBT)
R_θJC(DIODE)
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case for Diode
Thermal Resistance, Junction-to-Ambient
Notes:
(1)Repetitive test , pluse width = 100usec , Duty = 0.1
* Ic_pluse limited by max Tj
C
E
FGPF30N30D
300
± 30
80
10
40
46
18.5
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
2.7
3.0
62.5
Units
V
V
A
A
A
W
W
o_C
o_C
o_C
Units
o_C/W
°C/W
o_C/W
©2006 Fairchild Semiconductor Corporation
1
FGPF30N30D Rev. A
www.fairchildsemi.com