FGI3236 Datasheet, PDF (6/10 Pages) Fairchild Semiconductor – EcoSPARK 320mJ, 360V, N-Channel Ignition IGBT

Typical Performance Curves ^(Continued)
2000
1600
1200
C_IES
f = 1MHz
VGE = 0V
10
I_CE = 10A, T_J = 25^oC
8
V_CE = 6V
6
V_CE = 12V
800
400
C_RES
C_OES
0
0
5
10
15
20
25
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Capacitance vs. Collector to Emitter
Voltage
4
2
0
0
10
20
30
40
50
Q_g, GATE CHARGE(nC)
Figure 14. Gate Charge
380
I_CER = 10mA
370
T_J = -40^oC
T_J = 25^oC
360
T_J = 175^oC
350
10
100
1000
6000
R_G, SERIES GATE RESISTANCE (Ω)
Figure 15. Break Down Voltage vs. Series Gate Resistance
2
1 ^{DUTY CYCLE - DESCENDING ORDER}
D = 0.50
0.20
0.10
0.1
0.05
0.02
P_DM
0.01
0.01
SINGLE PULSE
1E-3
10^-5
10^-4
t₁
t₂
NOTES:
DUTY FACTOR: D = t₁/t₂
PEAK T_J = P_DM x Z_θJC x R_θJC + T_C
10^-3
10^-2
10^-1
1
t, RECTANGULAR PULSE DURATION(s)
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
FGB3236_F085 / FGI3236_F085 Rev. A1
6
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