FGI3236 Datasheet, PDF (4/10 Pages) Fairchild Semiconductor – EcoSPARK 320mJ, 360V, N-Channel Ignition IGBT

Typical Performance Curves
35
R_G = 1KΩ, V_GE = 5V
30
25
20
T_J = 25^oC
15
10
T_J = 150^oC
5
0 ^{SCIS Curves valid for Vclamp Voltages of <410V}
0 20 40 60 80 100 120 140 160
t_CLP, TIME IN CLAMP (µS)
Figure 1. Self Clamped Inductive Switching
Current vs. Time in Clamp
35
R_G = 1KΩ, V_GE = 5V
30
25
20
T_J = 25^oC
15
10
T_J = 150^oC
5
0
SCIS Curves valid for V_clamp Voltages of <410V
0
2
4
6
8
10
L, INDUCTANCE (mHy)
Figure 2. Self Clamped Inductive Switching
Current vs. Inductance
1.25
1.20
1.15
I_CE = 6A
V_GE = 3.7V
V_GE = 4.0V
1.10
1.05
V_GE = 8V
V_GE = 5V
V_GE = 4.5V
1.00
-75 -50 -25 0 25 50 75 100 125 150 175
T_J, JUNCTION TEMPERTURE (^oC)
Figure 3. Collector to Emitter On-State Voltage
vs. Junction Temperature
1.45
1.40
1.35
I_CE = 10A
V_GE = 4.0V
V_GE = 3.7V
1.30
1.25
V_GE = 5V
V_GE = 4.5V
1.20
-75
V_GE = 8V
-50 -25 0 25 50 75 100 125 150 175
T_J, JUNCTION TEMPERTURE (^oC)
Figure 4. Collector to Emitter On-State Voltage
vs. Junction Temperature
50
V_GE = 8.0V
V_GE = 5.0V
40 _{VGE = 4.5V}
V_GE = 4.0V
30 ^{VGE = 3.7V}
20
10
T_J = -40^oC
0
0
1
2
3
4
V_CE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage
vs. Collector Current
50
V_GE = 8.0V
V_GE = 5.0V
40 _{VGE = 4.5V}
V_GE = 4.0V
30 ^{VGE = 3.7V}
20
10
T_J = 25^oC
0
0
1
2
3
4
V_CE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 6. Collector to Emitter On-State Voltage
vs. Collector Current
FGB3236_F085 / FGI3236_F085 Rev. A1
4
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