FGI3236 Datasheet, PDF (5/10 Pages) Fairchild Semiconductor – EcoSPARK 320mJ, 360V, N-Channel Ignition IGBT

Typical Performance Curves ^(Continued)
50
V_GE = 8.0V
V_GE = 5.0V
40 _{VGE = 4.5V}
V_GE = 4.0V
30 ^{VGE = 3.7V}
20
10
T_J = 175^oC
0
0
1
2
3
4
V_CE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On-State Voltage
vs. Collector Current
50
V_GE = 4.0V
40
30
20
10
0
25
50
75 100 125 150 175
T_C, CASE TEMPERATURE(^oC)
Figure 9. DC Collector Current vs. Case
Temperature
50000
10000
1000
V_ECS = 24V
100
10
V_CES = 300V
1
V_CES = 250V
0.1
-50 -25 0 25 50 75 100 125 150 175
T_J, JUNCTION TEMPERATURE (^oC)
Figure 11. Leakage Current vs. Junction
Temperature
50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
40 V_CE = 5V
30
T_J = 175^oC
20
T_J = 25^oC
10
T_J = -40^oC
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V_GE, GATE TO EMITTER VOLTAGE (V)
Figure 8. Transfer Characteristics
2.0
V_CE = V_GE
1.8
I_CE = 1mA
1.6
1.4
1.2
1.0
0.8
-50 -25 0 25 50 75 100 125 150 175
T_J, JUNCTION TEMPERATURE(^oC)
Figure 10. Threshold Voltage vs. Junction
Temperature
14
I_CE = 6.5A, V_GE = 5V, R_G = 1KΩ
12
Resistive t_OFF
10
8
6
Inductive t_OFF
4
Resistive t_ON
2
0
25
50
75 100 125 150 175
T_J, JUNCTION TEMPERATURE (^oC)
Figure 12. Switching Time vs. Junction
Temperature
FGB3236_F085 / FGI3236_F085 Rev. A1
5
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