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FGI3236 Datasheet, PDF (2/10 Pages) Fairchild Semiconductor – EcoSPARK 320mJ, 360V, N-Channel Ignition IGBT
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
BVCER Collector to Emitter Breakdown Voltage (IC = 1mA)
BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA)
ESCIS25 Self Clamping Inductive Switching Energy (ISCIS = 14.7A, L = 3.0mHy, TJ = 25°C)
ESCIS150 Self Clamping Inductive Switching Energy (ISCIS = 10.4A, L = 3.0mHy, TJ = 150°C)
IC25
Collector Current Continuous, at VGE = 4.0V, TC = 25°C
IC110 Collector Current Continuous, at VGE = 4.0V, TC = 110°C
VGEM Gate to Emitter Voltage Continuous
PD
Power Dissipation Total, at TC = 25°C
Power Dissipation Derating, for TC > 25oC
TJ
Operating Junction Temperature Range
TSTG Storage Junction Temperature Range
TL
Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s)
TPKG Max. Lead Temp. for Soldering (Package Body for 10s)
ESD Electrostatic Discharge Voltage at100pF, 1500Ω
Package Marking and Ordering Information
Device Marking
FGB3236
FGI3236
Device
FGB3236_F085
FGI3236_F085
Package
TO263
TO262
Reel Size
330mm
Tube
Tape Width
24mm
NA
Ratings
360
24
320
160
44
27
±10
187
1.25
-40 to +175
-40 to +175
300
260
4
Units
V
V
mJ
mJ
A
A
V
W
W/oC
oC
oC
oC
oC
kV
Quantity
800 units
50 units
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off State Characteristics
BVCER
BVCES
BVECS
BVGES
ICES
IECS
R1
R2
ICE = 2mA, VGE = 0,
Collector to Emitter Breakdown Voltage RGE = 1KΩ, See Fig. 15
TJ = -40 to 150oC
ICE = 10mA, VGE = 0V,
Collector to Emitter Breakdown Voltage RGE = 0,
TJ = -40 to 150oC
Emitter to Collector Breakdown Voltage
ICE = -75mA, VGE = 0V,
TC = 25°C
Gate to Emitter Breakdown Voltage IGES = ±2mA
Collector to Emitter Leakage Current
VCES = 250V,
See Fig. 11
Emitter to Collector Leakage Current
VEC = 24V,
See Fig.11
Series Gate Resistance
Gate to Emitter Resistance
TC = 25oC
TC = 150oC
TC = 25oC
TC = 150oC
On State Characteristics
VCE(SAT) Collector to Emitter Saturation Voltage ICE = 6A, VGE = 4V,
VCE(SAT) Collector to Emitter Saturation Voltage ICE = 10A, VGE = 4.5V,
VCE(SAT) Collector to Emitter Saturation Voltage ICE = 15A, VGE = 4.5V,
ICE(ON) Collector to Emitter On State Current VGE = 5V, VCE = 5V
TC = 25oC,
See Fig. 3
TC = 150oC,
See Fig. 4
TC = 150oC
330 363 390 V
350 378 410 V
30 -
-
V
±12 ±14 -
V
-
- 25 µA
-
-
1 mA
-
-
1
mA
-
- 40
- 100 - Ω
10K - 30K Ω
- 1.14 1.4 V
- 1.32 1.7 V
- 1.61 2.05 V
50 -
-
A
FGB3236_F085 / FGI3236_F085 Rev. A1
2
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