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FQP90N10V2 Datasheet, PDF (5/10 Pages) Fairchild Semiconductor – 100V N-Channel MOSFET
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Typical Characteristics (Continued)
100
D =0 .5
1 0 -1
1 0 -2
0.2
0 .1
0 .05
0 .0 2
0 .0 1
s in g le p u lse
N o tes :
1.
Z (t)
θJC
=
0 .6
°C /W
M ax.
2. D uty F actor, D = t /t
12
3.
T
JM
•
T
C
=
P
DM
*
Z (t)
θJC
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t , S q u a re W a ve P u lse D u ra tio n [se c]
1
Figure 11-1. Transient Thermal Response Curve for FQP90N10V2
100
D = 0.5
0.2
0.1
1 0 -1
0 .0 5
0 .0 2
0 .0 1
1 0 -2
1 0 -5
N otes :
1. Z (t) = 1.8 °C /W M ax.
θJC
2. D uty Factor, D =t /t
12
3.
T
JM
•
T
C
=
P
DM
*
Z (t)
θJC
single pulse
PDM
t1
t2
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t , Square W ave Pulse D uration [sec]
1
Figure 11-2. Transient Thermal Response Curve for FQPF90N10V2
©2004 Fairchild Semiconductor Corporation
Rev. A1, April 2004
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