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FQP90N10V2 Datasheet, PDF (4/10 Pages) Fairchild Semiconductor – 100V N-Channel MOSFET
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Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
Notes :
1. V = 0 V
GS
2.
I
D
=
250µA
-50
0
50
100
150
200
T,
J
Junction
Temperature
[°C]
Figure 7. Breakdown Voltage Variation
vs Temperature
103
Operation in This Area
is Limited by R
DS(on)
10 µs
100 µs
102
1 ms
10 ms
DC
101
100
10-1
100
Notes :
1.
T
C
=
25°C
2.
T
J
=
175°C
3. Single Pulse
101
102
V , Drain-Source Voltage [V]
DS
Figure 9-1. Maximum Safe Operating Area
for FQP90N10V2
100
90
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
175
T,
C
Case
Temperature
[°C]
Figure 10. Maximum Drain Current
vs Case Temperature
©2004 Fairchild Semiconductor Corporation
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. V = 10 V
GS
2. I = 45 A
D
-50
0
50
100
150
200
T,
J
Junction
Temperature
[°C]
Figure 8. On-Resistance Variation
vs Temperature
103
Operation in This Area
is Limited by R
DS(on)
10 µs
102
100 µs
1 ms
10 ms
DC
101
100
10-1
100
Notes :
1.
T
C
=
25°C
2.
T
J
=
175°C
3. Single Pulse
101
102
V , Drain-Source Voltage [V]
DS
Figure 9-2. Maximum Safe Operating Area
for FQPF90N10V2
Rev. A1, April 2004
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