FQP90N10V2 Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – 100V N-Channel MOSFET

Typical Characteristics
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
10²
5.0 V
Bottom : 4.5 V
10¹
10^-1
Notes :
1. 250µs Pulse Test
2.
T
C
=
25°
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
30
25
V = 10V
GS
20
15
V = 20V
10
GS
5
Note
:
T
J
=
25°
0
0
100
200
300
400
500
600
I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
11000
10000
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
10^-1
C
iss
C
oss
C
rss
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
C =C
rss
gd
Notes ;
1. V = 0 V
GS
2. f = 1 MHz
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
10²
175°C
25°C
10¹
-55°C
10⁰
10^-1
2
Notes :
1. V = 40V
DS
2. 250µs Pulse Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
10²
10¹
10⁰
10^-1
0.2
175°C
25°C
Notes :
1. V = 0V
GS
2. 250µs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V , Source-Drain voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
V = 50V
DS
8
V = 80V
DS
6
4
2
Note : I = 90A
D
0
0
20
40
60
80
100
120
140
160
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
©2004 Fairchild Semiconductor Corporation
Rev. A1, April 2004