English
Language : 

FQP90N10V2 Datasheet, PDF (2/10 Pages) Fairchild Semiconductor – 100V N-Channel MOSFET
◁
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
100 --
ID = 250 µA, Referenced to 25°C --
0.1
IDSS
Zero Gate Voltage Drain Current
VDS = 100 V, VGS = 0 V
VDS = 80 V, TC = 150°C
--
--
--
--
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
--
--
--
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
2.0 --
4.0
V
VGS = 10 V, ID = 45 A
-- 8.5
10
mΩ
VDS = 40 V, ID = 45 A
(Note 4) --
72
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 4730 6150 pF
-- 1180 1530 pF
-- 300 390 pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 50 V, ID = 90 A,
RG = 25 Ω
--
52
114
ns
-- 492 994
ns
-- 304 618
ns
(Note 4, 5)
--
355 720
ns
VDS = 80 V, ID = 90 A,
-- 147 191 nC
VGS = 10 V
--
28
--
nC
(Note 4, 5) --
60
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
90
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
360
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 90 A
--
--
1.4
V
trr
Reverse Recovery Time
VGS = 0 V, IS = 90 A,
-- 114
--
ns
Qrr
Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4) --
0.54
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.3mH, IAS = 90A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 90A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2004 Fairchild Semiconductor Corporation
Rev. A1, April 2004
 ▷