FQI27N25TU_F085 Datasheet, PDF (5/7 Pages) Fairchild Semiconductor – N-Channel MOSFET

Typical Characteristics
80
80μs PULSE WIDTH
Tj=25^oC
60
40
20
V_GS
15V Top
10V
8V
7V
6V Bottom
6V
0
0
4
8
12
16
20
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
60
80μs PULSE WIDTH
Tj=150^oC
40
20
V_GS
15V ⁵T^.5o^Vp
10V
8V
7V
6V
5.5V
5V Bottom
5V
0
0
4
8
12
16
20
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics
550
I_D = 25.5A
440
330 _{TJ = 150}o_C
220
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
T_J = 25^oC
110
0
5
6
7
8
9
10
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 10. R_DSON vs. Gate Voltage
2.8
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
2.4
2.0
1.6
1.2
0.8
0.6
-80
I_D = 25.5A
V_GS = 10V
-40 0 40 80 120 160 200
T_J, JUNCTION TEMPERATURE(^oC)
Figure 11. Normalized R_DSON vs. Junction
Temperature
1.4
V_GS = V_DS
I_D = 250μA
1.2
1.0
0.8
0.6
0.4
-80
-40 0 40 80 120 160 200
T_J, JUNCTION TEMPERATURE(^oC)
Figure 12. Normalized Gate Threshold Voltage vs.
Temperature
1.2
I_D = 1mA
1.1
1.0
0.9
0.8
-80
-40 0 40 80 120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
Figure 13. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
FQB27N25TM_F085/FQI27N25TU_F085 Rev. C1
5
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