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FQI27N25TU_F085 Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – N-Channel MOSFET
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Electrical Characteristics TJ = 25°C unless otherwise noted.
Symbol
Parameter
Off Characteristics
Test Conditions
Min. Typ. Max. Units
BVDSS Drain to Source Breakdown Voltage
IDSS
Drain to Source Leakage Current
IGSS
Gate to Source Leakage Current
On Characteristics
ID = 250μA, VGS = 0V
250
VDS=250V, TJ = 25oC
-
VGS = 0V
TJ = 150oC(Note 4)
-
VGS = ±30V
-
-
-
V
-
1
μA
-
250 uA
-
±100 nA
VGS(th)
RDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
Dynamic Characteristics
VGS = VDS, ID = 250μA
3.0 4.1 5.0
V
ID = 25.5A, TJ = 25oC
-
108 131 mΩ
VGS= 10V TJ = 150oC(Note 4) -
265 310 mΩ
Ciss
Coss
Crss
Rg
Qg(ToT)
Qg(th)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
VDS = 25V, VGS = 0V,
f = 1MHz
-
1800
-
pF
-
350
-
pF
-
45
-
pF
f = 1MHz
-
0.82
-
Ω
VGS = 0 to 10V
VDD = 125V
-
45
49
nC
VGS = 0 to 2V
ID = 27A
-
3.3
4
nC
-
12
-
nC
-
23
-
nC
Switching Characteristics
ton
td(on)
tr
td(off)
tf
toff
Turn-On Time
Turn-On Delay
Rise Time
Turn-Off Delay
Fall Time
Turn-Off Time
Drain-Source Diode Characteristics
VDD = 125V, ID = 27A,
VGS = 10V, RGEN = 25Ω
-
-
196
ns
-
36
-
ns
-
122
-
ns
-
81
-
ns
-
60
-
ns
-
-
164
ns
VSD
Source to Drain Diode Voltage
trr
Reverse--Recovery Time
Qrr
Reverse--Recovery Charge
ISD = 25.5A, VGS = 0V
ISD = 12.75A, VGS = 0V
IF = 27A, dISD/dt = 100A/μs,
VDD=200V
-
-
1.5
V
-
-
1.25
V
-
205 238
ns
-
1.8
2.3
nC
Notes:
4: The maximum value is specified by design at TJ = 150°C. Product is not tested to this condition in production.
FQB27N25TM_F085/FQI27N25TU_F085 Rev. C1
2
www.fairchildsemi.com
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