FQI27N25TU_F085 Datasheet, PDF (4/7 Pages) Fairchild Semiconductor – N-Channel MOSFET

Typical Characteristics
1000
V_GS = 10V
100
10
T_C = 25^oC
FOR TEMPERATURES
ABOVE 25^oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I₂
150 - T_C
125
SINGLE PULSE
1
10^-5
10^-4
10^-3
10^-2
10^-1
10⁰
10¹
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Peak Current Capability
100
100us
10
1ms
OPERATION IN THIS
1 AREA MAY BE
LIMITED BY rDS(on) _{SINGLE PULSE}
TJ = MAX RATED
TC = 25^oC
0.1
10ms
100ms
1
10
100
1000
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 4. Forward Bias Safe Operating Area
100
If R = 0
t_AV = (L)(I_AS)/(1.3*RATED BV_DSS - V_DD)
If R ≠ 0
t_AV = (L/R)ln[(I_AS*R)/(1.3*RATED BV_DSS - V_DD) +1]
STARTING TJ = 25^oC
10
STARTING T_J = 125^oC
1
1E-3
0.01 0.1
1
10 100
t_AV, TIME IN AVALANCHE (ms)
1000
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Unclamped Inductive Switching
Capability
100
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
V_DD = 20V
10
T_J = 150^oC
1 TJ = 25^oC
T_J = -55^oC
0.1
2
4
6
8
10
12
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 6. Transfer Characteristics
200
V_GS = 0 V
100
T_J = 150 ^oC
10
T_J = 25 ^oC
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Forward Diode Characteristics
FQB27N25TM_F085/FQI27N25TU_F085 Rev. C1
4
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