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FQI27N25TU_F085 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel MOSFET
FQB27N25TM_F085/FQI27N25TU_F085
N-Channel MOSFET
250 V, 25.5 A, 131 mΩ
D
May 2014
Features
„ Typ RDS(on) = 108mΩ at VGS = 10V, ID = 25.5A
„ Typ Qg(tot) = 45nC at VGS = 10V, ID = 27A
„ UIS Capability
„ RoHS Compliant
„ Qualified to AEC Q101
Applications
„ Automotive Engine Control
„ Powertrain Management
„ Solenoid and Motor Drivers
„ Electronic Steering
„ Integrated Starter/Alternator
„ Distributed Power Architectures and VRM
„ Primary Switch for 12V Systems
GS
TO-263AB
D TO-262AB
G
S
For current package drawing, please refer to the Fairchild
website at www.fairchildsemi.com/packaging
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous (VGS=10) (Note 1)
Pulsed Drain Current
EAS
Single Pulse Avalanche Energy
Power Dissipation
PD
Derate above 25oC
TJ, TSTG Operating and Storage Temperature
RθJC
Thermal Resistance, Junction to Case
RθJA
Maximum Thermal Resistance, Junction to Ambient
TC = 25°C
TC = 25°C
(Note 2)
(Note 3)
Ratings
250
±30
25.5
See Figure 4
972
417
3.3
-55 to + 150
0.3
43
Units
V
V
A
mJ
W
W/oC
oC
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
FQB27N25TM
FQI27N25TU
Device
FQB27N25TM_F085
FQI27N25TU_F085
Package
TO-263AB
TO-262AB
Reel Size
330mm
Tube
Tape Width
24mm
N/A
Quantity
800 units
50 units
Notes:
1: Current is limited by bondwire configuration.
2: Starting TJ = 25°C, L = 4.67mH, IAS = 20.4A, VDD = 100V during inductor charging and VDD = 0V during time in avalanche.
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the
rating presented here is
bdarasiendpoinnsm. oRuθnJtiCngisognuaar1aninte2 epdadbyofd2eoszigcnowppheilre.
RθJAis
determined
by
the
user's
board
design.
The maximum
©2014 Fairchild Semiconductor Corporation
1
FQB27N25TM_F085/FQI27N25TU_F085 Rev. C1
www.fairchildsemi.com