FGPF50N30T Datasheet, PDF (5/7 Pages) Fairchild Semiconductor – 300V, 50A PDP IGBT

Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
1000
Common Emitter
V_GE = 15V, R_G = 15Ω
T_C = 25^oC
T_C = 125^oC
100
t_r
t_d(on)
10
10
20
30
40
50
Collector Current, I_C [A]
Figure 15. Switching Loss vs. Gate Resistance
2000
Common Emitter
V_CC = 200V, V_GE = 15V
1000 ^{IC = 30A}
T_C = 25^oC
T_C = 125^oC
E_off
Figure 14. Turn-off Characteristics vs.
Collector Current
500
Common Emitter
V_GE = 15V, R_G = 15Ω
T_C = 25^oC
T_C = 125^oC
t_f
t_d(off)
100
10
20
30
40
50
Collector Current, I_C [A]
Figure 16. Switching Loss vs.Gate Resistance
3000
Common Emitter
V_GE = 15V, R_G = 15Ω
1000
T_C = 25^oC
T_C = 125^oC
E_off
E_on
E_on
100
100
0
20
40
60
80
100
Gate Resistance, R_G [Ω]
Figure 17.Transient Thermal Impedance of IGBT
30
10
20
30
40
50
Collector Current, I_C [A]
10
1 ^0.5
0.2
0.1
0.1 ^0.05
0.02
0.01
0.01
single pulse
1E-3
1E-5
1E-4
P_DM
t₁
t₂
Duty Factor, D = t1/t2
Peak T_j = Pdm x Zthjc + T_C
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
10
100
FGPF50N30T Rev. A
5
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