FGPF50N30T Datasheet, PDF (3/7 Pages) Fairchild Semiconductor – 300V, 50A PDP IGBT

Typical Performance Characteristics
Figure 1. Typical Output Characteristics
120
T_C = 25^oC
20V
15V
12V
10V
80
Figure 2. Typical Output Characteristics
120
T_C = 125^oC
20V
15V
12V
10V
80
40
V_GE = 8V
40
V_GE = 8V
0
0.0
1.5
3.0
4.5
6.0
Collector-Emitter Voltage, V_CE [V]
Figure 3. Typical Saturation Voltage
Characteristics
120
Common Emitter
100
V_GE = 15V
T_C = 25^oC
80 ^{TC = 125oC}
60
40
20
0
0
1
2
3
4
Collector-Emitter Voltage, V_CE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
2.0
Common Emitter
V_GE = 15V
1.8
50A
1.6
1.4
30A
1.2
I_C = 15A
1.0
0.8
25
50
75
100
125
Collector-EmitterCase Temperature, T_C [^oC]
0
0.0
1.5
3.0
4.5
6.0
Collector-Emitter Voltage, V_CE [V]
Figure 4. Transfer Characteristics
120
Common Emitter
V_CE = 20V
T_C = 25^oC
T_C = 125^oC
80
40
0
2
4
6
8
10 12 14
Gate-Emitter Voltage,V_GE [V]
Figure 6. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 25^oC
16
12
8
50A
4
30A
I_C = 15A
0
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
FGPF50N30T Rev. A
3
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