FGPF50N30T Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – 300V, 50A PDP IGBT

FGPF50N30T
300V, 50A PDP IGBT
Features
• High current capability
• Low saturation voltage: V_CE(sat) =1.4V @ I_C = 30A
• High input impedance
• Fast switching
• RoHS compliant
Applications
• PDP System
January 2008
tm
General Description
Using Novel Trench IGBT Technology, Fairchild’s new sesries of
trench IGBTs offer the optimum performance for PDP applica-
tions where low conduction and switching losses are essential.
C
TO-220F
1
1.Gate 2.Collector 3.Emitter
Absolute Maximum Ratings
Symbol
V_CES
V_GES
I_{CM (1)}
P_D
T_J
T_stg
T_L
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ T_C = 25^oC
@ T_C = 25^oC
@ T_C = 100^oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
R_θJC(IGBT)
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Notes:
1: Repetitive test , Pulse width=100usec , Duty=0.1
* I_C_pluse limited by max Tj
G
E
Ratings
300
± 30
120
46.8
18.7
-55 to +150
-55 to +150
300
Typ.
-
-
Max.
2.67
62.5
Units
V
V
A
W
W
o_C
o_C
o_C
Units
o_C/W
o_C/W
©2008 Fairchild Semiconductor Corporation
1
FGPF50N30T Rev. A
www.fairchildsemi.com