FGPF50N30T Datasheet, PDF (4/7 Pages) Fairchild Semiconductor – 300V, 50A PDP IGBT

Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 125^oC
16
12
8
30A
4
50A
I_C = 15A
0
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
Figure 9. Gate charge Characteristics
15
Common Emitter
T_C = 25^oC
12
V_CC = 100V
9
200V
6
3
0
0
25
50
75
100
Gate Charge, Q_g [nC]
Figure 11. Turn-on Characteristics vs.
Gate Resistance
400
t_r
100
10
0
t_d(on)
Common Emitter
V_CC = 200V, V_GE = 15V
I_C = 30A
T_C = 25^oC
T_C = 125^oC
20
40
60
80
100
Gate Resistance, R_G [Ω]
Figure 8. Capacitance Characteristics
10000
Common Emitter
V_GE = 0V, f = 1MHz
C_ies
T_C = 25^oC
1000
C_oes
C_res
100
50
1
10
30
Collector-Emitter Voltage, V_CE [V]
Figure 10. SOA Characteristics
500
100
10µs
100µs
10
1ms
10 ms
1
Single Nonrepetitive
0.1 Pulse T_C = 25^oC
Curves must be derated
linearly with increase
in temperature
0.01
0.1
1
10
DC
100 500
Collector-Emitter Voltage, V_CE [V]
Figure 12. Turn-off Characteristics vs.
Gate Resistance
5500
1000
Common Emitter
V_CC = 200V, V_GE = 15V
I_C = 30A
T_C = 25^oC
T_C = 125^oC
t_d(off)
t_f
100
10
0
20
40
60
80
100
Gate Resistance, R_G [Ω]
FGPF50N30T Rev. A
4
www.fairchildsemi.com