FGPF120N30 Datasheet, PDF (5/7 Pages) Fairchild Semiconductor – 300V, 120A PDP IGBT

Figure 13 Turn-On Characteristics vs.
Collector Current
1000
Comm on Emitter
V = 15V, R = 10Ω
GE
G
T = 25oC
C
T = 125oC
C
100
tr
td(on)
10
10
100
Collector Current , Ic [A]
Figure 15. Switching Loss vs.
Gate Resistance
1000
Eoff
Figure 14. Turn-Off Characteristics vs.
Collector Current
1000
tf
tf
100
td(off)
Common Emitter
V = 15V, R = 8.7Ω
GE
G
T = 25oC
C
T = 125oC
C
10
10
100
Collector Current , Ic [A]
Figure 16. Switching Loss vs.
Collector Current
1000
100
Eon
10
1
Com mon Em itter
V = 200V, V = 15V
CC
GE
I = 25A
C
T = 25oC
C
T = 125oC
C
10
100
Gate Resistance, R [Ω ]
G
Eoff
100
Eoff
Eon
10
10
Common Emitter
V = 15V, R = 8.7Ω
GE
G
T = 25oC
C
T = 125oC
C
100
Collector Current , Ic [A]
Figure 17. Transient Thermal Impedance of IGBT
10
1
0 .5
0 .2
0 .1
0 .0 5
0 .1
0.0 2
0 .01
0 .0 1
1E -3
1E -5
s in g le p u ls e
1E -4
1E -3
0 .0 1
0 .1
R e c ta n g u la r P u ls e D u ra tio n [s e c ]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + T_C
1
10
5
FGPF120N30 Rev. A
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