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FGPF120N30 Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – 300V, 120A PDP IGBT
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Package Marking and Ordering Information
Device Marking
Device
FGPF120N30
FGPF120N30TU
Package
TO-220F
Packaging
Type
Rail / Tube
Qty per Tube
50ea
Max Qty
per Box
-
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter
Saturation Voltage
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VGE = 0V, IC = 250uA
VGE = 0V, IC = 250uA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 250uA, VCE = VGE
IC = 25A, VGE = 15V
IC = 120A, VGE = 15V
TC = 25°C
IC = 120 A, VGE = 15V
TC = 125°C
VCE = 30V, VGE = 0V,
f = 1MHz
VCC = 200 V, IC = 25A,
RG = 8.7Ω, VGE = 15V,
Resistive Load, TC = 25°C
VCC = 200 V, IC = 25 A,
RG = 8.7Ω, VGE = 15V,
Resistive Load, TC = 125°C
VCE = 200 V, IC =25A,
VGE = 15V
Min. Typ. Max. Units
300
--
--
V
--
0.6
--
V/°C
--
--
100
uA
--
-- ± 250 nA
2.5
4.0
5.0
V
--
1.1
1.4
V
--
1.9
--
V
--
2.1
--
V
--
2190
--
pF
--
310
--
pF
--
98
--
pF
--
35
--
ns
--
140
--
ns
--
120
--
ns
--
140 350
ns
--
35
--
ns
--
140
--
ns
--
130
--
ns
--
280
--
ns
--
112 168
nC
--
14
21
nC
--
50
75
nC
2
FGPF120N30 Rev. A
www.fairchildsemi.com
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